Ultrafast dynamics of carriers and phonons of photoinjected double-plasma in aluminium nitride

Aluminum nitride is attracting great interest of the industry and scientific community due to its interesting properties. In this paper performed a theoretical study on ultrafast transient transport properties photoinjected carriers in wurtzite AlN subjected electric fields up 80 kV/cm. For this, Nonequilibrium Statistical Operator Method was used. The evolution towards steady state drift velocity (electrons holes) nonequilibrium temperature (carriers phonons) subpicosecond scale were determined.